发明申请
- 专利标题： Light emitting diode and fabrication method thereof
- 专利标题（中）： 发光二极管及其制造方法
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申请号： US11069567申请日： 2005-03-02
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公开(公告)号： US20050221527A1公开(公告)日： 2005-10-06
- 发明人: Wen-Yung Yeh , Jenq-Dar Tsay , Chang-Cheng Chuo , Jung-Tsung Hsu , Jim-Yong Chi
- 申请人： Wen-Yung Yeh , Jenq-Dar Tsay , Chang-Cheng Chuo , Jung-Tsung Hsu , Jim-Yong Chi
- 专利权人： Industrial Technology Research Institute
- 当前专利权人： Industrial Technology Research Institute
- 优先权： TW93107439 20040319
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L33/22 ; H01L33/32 ; H01L33/62
摘要：
A light emitting diode (LED). The LED comprises a LED chip comprising an n-type semiconductor layer, a active layer and a p-type semiconductor layer. An n-type ohmic contact electrode and a p-type ohmic contact electrode electrically contact the n-type semiconductor layer and the p-type semiconductor layer respectively. An AlGaInN thick film is on the LED chip, and the AlGaInN thick film has an oblique side and a textured top surface.
公开/授权文献
- US07358537B2 Light emitting diode and fabrication method thereof 公开/授权日：2008-04-15
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