发明申请
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11099511申请日： 2005-04-06
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公开(公告)号： US20050230712A1公开(公告)日： 2005-10-20
- 发明人: Shigetomi Michimata , Ryo Nagai , Satoru Yamada , Yoshitaka Nakamura , Ryoichi Nakamura
- 申请人： Shigetomi Michimata , Ryo Nagai , Satoru Yamada , Yoshitaka Nakamura , Ryoichi Nakamura
- 优先权： JP2004-111926 20040406
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/26 ; H01L21/265 ; H01L21/283 ; H01L21/285 ; H01L21/3205 ; H01L21/74 ; H01L21/768 ; H01L23/52 ; H01L27/10 ; H01L29/78
摘要：
A method includes the steps of: implanting boron into a surface region of a silicon substrate to form a p+ diffused region; implanting indium into the surface of the p+ diffused region, to form an indium-implanted layer; forming a contact metal layer on the indium-implanted layer; and reacting silicon in the silicon substrate including the indium-implanted layer with metal in the contact metal layer to form a titanium silicide layer.
公开/授权文献
- US07414291B2 Semiconductor device and method of manufacturing the same 公开/授权日：2008-08-19
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