发明申请
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11107890申请日： 2005-04-18
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公开(公告)号： US20050230728A1公开(公告)日： 2005-10-20
- 发明人: Katsuaki Natori , Soichi Yamazaki , Koji Yamakawa , Hiroyuki Kanaya
- 申请人： Katsuaki Natori , Soichi Yamazaki , Koji Yamakawa , Hiroyuki Kanaya
- 优先权： JP2004-123371 20040419
- 主分类号： H01L27/105
- IPC分类号： H01L27/105 ; H01L21/02 ; H01L21/8246 ; H01L23/522 ; H01L27/115 ; H01L31/113
摘要：
A semiconductor device according to an aspect of the present invention comprises a semiconductor substrate, a ferroelectric capacitor, a protective film and an auxiliary capacitor. The ferroelectric capacitor is provided above the semiconductor substrate and comprises an upper electrode, a lower electrode and a ferroelectric film interposed between the upper and lower electrodes. The protective film is formed, covering the ferroelectric capacitor. The auxiliary capacitor is provided in a circuit section peripheral to the ferroelectric capacitor and uses the protective film as capacitor insulating film.
公开/授权文献
- US07501675B2 Semiconductor device and method of manufacturing the same 公开/授权日：2009-03-10
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