发明申请
- 专利标题： Semiconductor memory device
- 专利标题（中）： 半导体存储器件
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申请号： US11071351申请日： 2005-03-04
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公开(公告)号： US20050232044A1公开(公告)日： 2005-10-20
- 发明人: Satoru Akiyama , Riichiro Takemura , Takayuki Kawahara , Tomonori Sekiguchi
- 申请人： Satoru Akiyama , Riichiro Takemura , Takayuki Kawahara , Tomonori Sekiguchi
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 优先权： JP2004-109598 20040402
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242 ; G11C7/02 ; G11C7/06 ; G11C11/401 ; G11C11/409 ; G11C11/4091 ; H01L27/108
摘要：
Due to the further scaling down, the offset of the sense amplifier is increased and the malfunction occurs in the read operation, and thus, the yield of the chip is degraded. For its prevention, a plurality of pull-down circuits and one pull-up circuit are used to constitute the sense amplifier circuit. Also, the transistor in one of the plurality of pull-down circuits has a constant such as a channel length or a channel width larger than that of the transistor in the other pull-down circuit. Further, the pull-down circuit with a larger constant of the transistor is first activated, and then, the other pull-down circuit and the pull-up circuit are activated to perform the read operation.
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