发明申请
US20050233527A1 Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
有权
制造具有高k栅极电介质层和金属栅电极的半导体器件的方法
- 专利标题： Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
- 专利标题（中）： 制造具有高k栅极电介质层和金属栅电极的半导体器件的方法
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申请号： US10828958申请日： 2004-04-20
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公开(公告)号： US20050233527A1公开(公告)日： 2005-10-20
- 发明人: Justin Brask , Jack Kavalieros , Mark Doczy , Uday Shah , Chris Barns , Matthew Metz , Suman Datta , Annalisa Cappellani , Robert Chau
- 申请人： Justin Brask , Jack Kavalieros , Mark Doczy , Uday Shah , Chris Barns , Matthew Metz , Suman Datta , Annalisa Cappellani , Robert Chau
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/8238 ; H01L21/336
摘要：
A method for making a semiconductor device is described. That method comprises forming a first dielectric layer on a substrate, then forming a trench within the first dielectric layer. After forming a second dielectric layer on the substrate, a first metal layer is formed within the trench on a first part of the second dielectric layer. A second metal layer is then formed on the first metal layer and on a second part of the second dielectric layer.
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