发明申请
US20050235754A1 Low pass filter semiconductor structures for use in transducers for measuring low dynamic pressures in the presence of high static pressures
有权
用于传感器的低通滤波器半导体结构,用于在存在高静压的情况下测量低动态压力
- 专利标题: Low pass filter semiconductor structures for use in transducers for measuring low dynamic pressures in the presence of high static pressures
- 专利标题(中): 用于传感器的低通滤波器半导体结构,用于在存在高静压的情况下测量低动态压力
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申请号: US11100652申请日: 2005-04-07
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公开(公告)号: US20050235754A1公开(公告)日: 2005-10-27
- 发明人: Anthony Kurtz , Tonghuo Shang , Boaz Kochman
- 申请人: Anthony Kurtz , Tonghuo Shang , Boaz Kochman
- 主分类号: G01L7/08
- IPC分类号: G01L7/08 ; G01L13/02 ; G01L19/06
摘要:
A semiconductor filter is provided to operate in conjunction with a differential pressure transducer. The filter receives a high and very low frequency static pressure attendant with a high frequency low dynamic pressure at one end, the filter operates to filter said high frequency dynamic pressure to provide only the static pressure at the other filter end. A differential transducer receives both dynamic and static pressure at one input port and receives said filtered static pressure at the other port where said transducer provides an output solely indicative of dynamic pressure. The filter in one embodiment has a series of etched channels directed from an input end to an output end. The channels are etched pores of extremely small diameter and operate to attenuate or filter the dynamic pressure. In another embodiment, a spiral tubular groove is found between a silicon wafer and a glass cover wafer, an input port of the groove receives both the static and dynamic pressure with an output port of the groove providing only static pressure. The groove filters attenuate dynamic pressure to enable the differential transducer to provide an output only indicative of dynamic pressure by cancellation of the static pressure.
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