发明申请
- 专利标题: Heat dissipation structure and method thereof
- 专利标题(中): 散热结构及其方法
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申请号: US10829583申请日: 2004-04-22
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公开(公告)号: US20050236716A1公开(公告)日: 2005-10-27
- 发明人: Hsuch-Chung Chen , Yi-Lung Cheng , Hsien-Wei Chen , Shin-Puu Jeng
- 申请人: Hsuch-Chung Chen , Yi-Lung Cheng , Hsien-Wei Chen , Shin-Puu Jeng
- 主分类号: H01L23/367
- IPC分类号: H01L23/367 ; H01L23/48 ; H01L23/528
摘要:
A semiconductor structure and method for dissipating heat away from a semiconductor device having a plurality of power lines is provided. The semiconductor structure includes a semiconductor substrate and a plurality of interconnect structures disposed on the substrate and in contact therewith and extending through the semiconductor device, the interconnect structures for dissipating heat to the substrate. Each of the plurality of interconnect structures comprises at least one via stack.
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