Invention Application
- Patent Title: Ferroelectric capacitor having a substantially planar dielectric layer and a method of manufacture therefor
- Patent Title (中): 具有基本上平面的电介质层的铁电电容器及其制造方法
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Application No.: US10829053Application Date: 2004-04-21
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Publication No.: US20050239218A1Publication Date: 2005-10-27
- Inventor: Sanjeev Aggarwal , Kelly Taylor , Lindsey Hall , Satyavolu Rao
- Applicant: Sanjeev Aggarwal , Kelly Taylor , Lindsey Hall , Satyavolu Rao
- Applicant Address: US TX Dallas 75265-5474
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas 75265-5474
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/20 ; H01L21/3105 ; H01L21/8246 ; H01L27/115
Abstract:
The present invention provides a ferroelectric capacitor, a method of manufacture therefor, and a method of manufacturing a ferroelectric random access memory (FeRAM) device. The ferroelectric capacitor (100), among other elements, includes a substantially planar ferroelectric dielectric layer (165) located over a first electrode layer (160), wherein the substantially planar ferroelectric dielectric layer (165) has an average surface roughness of less than about 4 nm. The ferroelectric capacitor (100) further includes a second electrode layer (170) located over the substantially planar ferroelectric dielectric layer (165).
Public/Granted literature
- US07153706B2 Ferroelectric capacitor having a substantially planar dielectric layer and a method of manufacture therefor Public/Granted day:2006-12-26
Information query
IPC分类:
