发明申请
- 专利标题： PCMO thin film with memory resistance properties
- 专利标题（中）： 具有记忆电阻特性的PCMO薄膜
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申请号： US10831677申请日： 2004-04-23
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公开(公告)号： US20050239262A1公开(公告)日： 2005-10-27
- 发明人: Wei-Wei Zhuang , Tingkai Li , Sheng Hsu , Fengyan Zhang
- 申请人： Wei-Wei Zhuang , Tingkai Li , Sheng Hsu , Fengyan Zhang
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 主分类号： H01L27/105
- IPC分类号： H01L27/105 ; H01L21/00 ; H01L21/20 ; H01L27/10 ; H01L45/00 ; H01L49/02
摘要：
A method is provided for forming a Pr0.3Ca0.7MnO3 (PCMO) thin film with crystalline structure-related memory resistance properties. The method comprises: forming a PCMO thin film with a first crystalline structure; and, changing the resistance state of the PCMO film using pulse polarities responsive to the first crystalline structure. In one aspect the first crystalline structure is either amorphous or a weak-crystalline. Then, the resistance state of the PCMO film is changed in response to unipolar pulses. In another aspect, the PCMO thin film has either a polycrystalline structure. Then, the resistance state of the PCMO film changes in response to bipolar pulses.
公开/授权文献
- US07402456B2 PCMO thin film with memory resistance properties 公开/授权日：2008-07-22
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