发明申请
US20050239984A1 Photoresists, fluoropolymers and processes for 157 nm microlithography
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光刻胶，含氟聚合物和157 nm微光刻法
- 专利标题： Photoresists, fluoropolymers and processes for 157 nm microlithography
- 专利标题（中）： 光刻胶，含氟聚合物和157 nm微光刻法
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申请号： US10523492申请日： 2003-08-08
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公开(公告)号： US20050239984A1公开(公告)日： 2005-10-27
- 发明人: Andrew Feiring , Frank Schadt , Viacheslav Petrov , Bruce Smart , William Farnham
- 申请人： Andrew Feiring , Frank Schadt , Viacheslav Petrov , Bruce Smart , William Farnham
- 优先权： US60402225 20020809
- 国际申请： PCT/US03/25023 WO 20030808
- 主分类号： C08F8/00
- IPC分类号： C08F8/00 ; C08F12/20 ; C08F214/18 ; C08F214/26 ; C08F232/00 ; C08F232/08 ; G03F7/00 ; G03F7/004 ; G03F7/038 ; G03F7/039 ; H01L21/027
摘要：
The invention provides a polymer having (a) at least one repeat unit derived from an ethylenically unsaturated compound having at least one fluorine atom covalently attached to an ethylenically unsaturated carbon atom; and (b) at least one repeat unit derived from an ethylenically unsaturated cyclic compound of structure: (I) wherein n is 0, 1, or 2; and R2 to R4 are independently H; C1-C10 alkyl or alkoxy, optionally substituted by halogen or ether oxygens; or C6-C20 aryl. These polymers can be used in making photoresist compositions and coated substrates.
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