发明申请
- 专利标题： Capacitive dynamic quantity sensor and semiconductor device
- 专利标题（中）： 电容动态量传感器和半导体器件
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申请号： US11099163申请日： 2005-04-05
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公开(公告)号： US20050242413A1公开(公告)日： 2005-11-03
- 发明人: Mitsuo Yarita , Minoru Sudou , Kenji Kato
- 申请人： Mitsuo Yarita , Minoru Sudou , Kenji Kato
- 优先权： JP2004-110653 20040405; JP2004-110654 20040405; JP2004-167881 20040607; JP2004-186161 20040624; JP2004-206476 20040713; JP2005-106297 20050401
- 主分类号： G01C19/56
- IPC分类号： G01C19/56 ; G01P15/08 ; G01P15/125 ; H01L29/84
摘要：
A capacitive dynamic quantity sensor whose size is small and whose reliability and mass productivity are high is provided. In order to realize signal transmission from a lower electrode to an upper electrode, silicon columns which are electrically isolated from one another but not mechanically isolated from one another are formed to connect both electrodes.
公开/授权文献
- US07294895B2 Capacitive dynamic quantity sensor and semiconductor device 公开/授权日：2007-11-13
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