发明申请
US20050243886A1 Carrier bonded 1550 nm VCSEL with InP substrate removal
失效
载体键合1550nm VCSEL,其中去除了InP衬底
- 专利标题: Carrier bonded 1550 nm VCSEL with InP substrate removal
- 专利标题(中): 载体键合1550nm VCSEL,其中去除了InP衬底
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申请号: US11007081申请日: 2004-12-08
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公开(公告)号: US20050243886A1公开(公告)日: 2005-11-03
- 发明人: Tzu-Yu Wang , Jin Kim , Hoki Kwon , Gyoungwon Park , Jae-Hyun Ryou
- 申请人: Tzu-Yu Wang , Jin Kim , Hoki Kwon , Gyoungwon Park , Jae-Hyun Ryou
- 专利权人: Honeywell International Inc.,Finisar Corporation
- 当前专利权人: Honeywell International Inc.,Finisar Corporation
- 主分类号: H01S3/08
- IPC分类号: H01S3/08 ; H01S5/187
摘要:
A vertical cavity surface emitting laser (VCSEL) structure includes a bottom distributed Bragg reflector (DBR) arranged over a substrate; a metal layer interposed between the bottom DBR and the substrate, wherein the metal layer and bottom DBR form a composite mirror structure. A patterned dielectric layer may be interposed between the metal layer and the bottom DBR to reduce a deleterious chemical reaction between the metal layer and the bottom DBR. The metal layer directly contacts a portion of the bottom DBR to enhance the electrical and thermal conductivity of the
公开/授权文献
- US07286584B2 Carrier bonded 1550 nm VCSEL with InP substrate removal 公开/授权日:2007-10-23
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