发明申请
US20050243886A1 Carrier bonded 1550 nm VCSEL with InP substrate removal 失效
载体键合1550nm VCSEL,其中去除了InP衬底

Carrier bonded 1550 nm VCSEL with InP substrate removal
摘要:
A vertical cavity surface emitting laser (VCSEL) structure includes a bottom distributed Bragg reflector (DBR) arranged over a substrate; a metal layer interposed between the bottom DBR and the substrate, wherein the metal layer and bottom DBR form a composite mirror structure. A patterned dielectric layer may be interposed between the metal layer and the bottom DBR to reduce a deleterious chemical reaction between the metal layer and the bottom DBR. The metal layer directly contacts a portion of the bottom DBR to enhance the electrical and thermal conductivity of the
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