公开(公告)号：US07286584B2

公开(公告)日：2007-10-23

申请号：US11007081

申请日：2004-12-08

Applicant: Tzu-Yu Wang ,  Jin K. Kim ,  Hoki Kwon ,  Gyoungwon Park ,  Jae-Hyun Ryou

Inventor： Tzu-Yu Wang ,  Jin K. Kim ,  Hoki Kwon ,  Gyoungwon Park ,  Jae-Hyun Ryou

IPC: H01S5/00

CPC classification number: H01S5/18377 ,  H01S5/18341 ,  H01S5/18375

Abstract: A vertical cavity surface emitting laser (VCSEL) structure includes a bottom distributed Bragg reflector (DBR) arranged over a substrate; a metal layer interposed between the bottom DBR and the substrate, wherein the metal layer and bottom DBR form a composite mirror structure. A patterned dielectric layer may be interposed between the metal layer and the bottom DBR to reduce a deleterious chemical reaction between the metal layer and the bottom DBR. The metal layer directly contacts a portion of the bottom DBR to enhance the electrical and thermal conductivity of the VCSEL structure.

Abstract translation: 垂直腔表面发射激光器（VCSEL）结构包括布置在衬底上的底部分布布拉格反射器（DBR）; 插入在底部DBR和基板之间的金属层，其中金属层和底部DBR形成复合反射镜结构。 可以在金属层和底部DBR之间插入图案化的介电层，以减少金属层和底部DBR之间的有害的化学反应。 金属层直接接触底部DBR的一部分以增强VCSEL结构的电导率和导热性。

公开(公告)号：US07054345B2

公开(公告)日：2006-05-30

申请号：US10607887

申请日：2003-06-27

Applicant: Jae-Hyun Ryou ,  Tzu-Yu Wang ,  Jin K. Kim ,  Gyoungwon Park ,  Hoki Kwon

Inventor： Jae-Hyun Ryou ,  Tzu-Yu Wang ,  Jin K. Kim ,  Gyoungwon Park ,  Hoki Kwon

IPC: H01S5/00

CPC classification number: B82Y20/00 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/18372 ,  H01S5/2063 ,  H01S5/34313 ,  H01S5/34366

Abstract: A vertical cavity surface emitting laser having an oxidizable layer oxidized with enhanced lateral oxidation. The oxidation may involve adding oxygen in the form of a fluid, with or without other fluid such as water vapor, in the oxidizing environment, and/or in the layer to be oxidized. This oxidation approach may be used for layers with relatively low aluminum content such as in InP based structures, or with high aluminum content such as in GaAs based structures.

Abstract translation: 一种垂直腔面发射激光器，其具有被增强的侧向氧化氧化的可氧化层。 氧化可以包括在氧化环境中和/或待氧化的层中加入流体形式的氧气，其中有或没有其它流体，例如水蒸汽。 该氧化方法可用于具有相对低的铝含量的层，例如基于InP的结构，或者具有高的铝含量，例如在GaAs基结构中。

公开(公告)号：US20050243887A1

公开(公告)日：2005-11-03

申请号：US10836165

申请日：2004-04-30

Applicant: Hoki Kwon

Inventor： Hoki Kwon

IPC: H01S3/08 ,  H01S5/187

CPC classification number: H01S5/187 ,  H01S5/183

Abstract: A VCSEL includes a substrate; a first mirror stack over the substrate; an active region having a plurality of quantum wells over the first mirror stack; and a second mirror stack over the active region, wherein either or both of the first and second mirror stacks include alternating layers of II-VI and III-V compounds, and wherein said II-VI compound is selected from the group consisting of ZnCdSe, ZnSeTe and ZnMgSe, and said III-V compound is selected from the group consisting of InGaAsP, InAlGaAs and InP. Such a mirror stack is especially useful for a long-wavelength VCSEL.

Abstract translation: VCSEL包括衬底; 衬底上的第一反射镜堆叠; 有源区，其在所述第一反射镜叠层上具有多个量子阱; 以及在所述有源区上的第二反射镜叠层，其中所述第一和第二反射镜叠层中的任一个或两者包括II-VI和III-V化合物的交替层，并且其中所述II-VI化合物选自ZnCdSe， ZnSeTe和ZnMgSe，并且所述III-V族化合物选自InGaAsP，InAlGaAs和InP。 这种镜像堆对于长波长VCSEL特别有用。

公开(公告)号：US20050243881A1

公开(公告)日：2005-11-03

申请号：US11026397

申请日：2004-12-30

Applicant: Hoki Kwon ,  Tzu-Yu Wang ,  Jae-Hyun Ryou ,  Jin Kim ,  Gyoungwon Park

Inventor： Hoki Kwon ,  Tzu-Yu Wang ,  Jae-Hyun Ryou ,  Jin Kim ,  Gyoungwon Park

IPC: H01S5/00 ,  H01S5/183 ,  H01S5/343

CPC classification number: B82Y20/00 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/34306 ,  H01S5/3434 ,  H01S2301/166 ,  H01S2304/04

Abstract: A current confinement layer of a VCSEL is formed by adjusting flow rates of In-, Al-, and As-containing precursors introduced within a deposition chamber. By maintaining a low ratio between the flow rate of the As-containing precursors and the total flow rate of In- and Al-containing precursors (e.g., less than 25, 10, 5, or 1), a current confinement layer, lattice matched to InP and having an enhanced oxidation rate, may be formed.

Abstract translation: 通过调节在沉积室内引入的含In，Al和As的前体的流速来形成VCSEL的电流限制层。 通过保持含砷前体的流速与含In和Al的前体的总流速（例如，小于25,10,5或1）之间的低比例，电流限制层，晶格匹配 至InP并具有增强的氧化速率。

公开(公告)号：US06822995B2

公开(公告)日：2004-11-23

申请号：US10078474

申请日：2002-02-21

Applicant: Hoki Kwon

Inventor： Hoki Kwon

IPC: H01S308

CPC classification number: H01S5/18308 ,  H01S5/18358 ,  H01S5/3095 ,  H01S2301/173

Abstract: A vertical cavity surface emitting laser having a GaAs/Al(Ga)As DBR mirror over an InP layer A first GaAs layer is MOCVD grown on an InP layer at a growth temperature of between 400 and 450° C. Then a second GaAs layer is grown by MOCVD at a growth temperature of about 600° C. over the first GaAs layer. A GaAs/Al(Ga)As DBR mirror is then grown over the second GaAs layer. Beneficially, an insulating layer is disposed between the second GaAs layer and the GaAs/Al(Ga)As DBR mirror. The insulating layer includes an opening that exposes the second GaAs layer. Then the GaAs/Al(Ga)As DBR mirror is grown by lateral epitaxial overgrowth. The lower DBR can be comprised of a material that provides an acceptable lattice match with InP layers. A tunnel junction can be formed over an InP active region.

Abstract translation: 在InP层A上具有GaAs / Al（Ga）As DBR镜的垂直腔表面发射激光器的第一GaAs层是在400-450℃的生长温度下在InP层上生长的MOCVD。然后第二GaAs层是 通过MOCVD在大约600℃的生长温度下在第一GaAs层上生长。 然后在第二GaAs层上生长GaAs / Al（Ga）As DBR镜。 有利的是，在第二GaAs层和GaAs / Al（Ga）As DBR镜之间设置绝缘层。 绝缘层包括露出第二GaAs层的开口。 然后通过横向外延生长生长GaAs / Al（Ga）As DBR镜。 下DBR可以由提供与InP层可接受的晶格匹配的材料组成。 可以在InP有源区上形成隧道结。

公开(公告)号：US07545560B2

公开(公告)日：2009-06-09

申请号：US10961624

申请日：2004-10-08

Applicant: Hoki Kwon

Inventor： Hoki Kwon

IPC: H01L31/0304 ,  H01L31/0352

CPC classification number: H01S5/183 ,  H01S5/305 ,  H01S5/3206

Abstract: Distributed Bragg reflector (DBR) with reduced DX centers. A DBR includes an AlAs region. The AlAs region includes essentially homogeneous AlAs. The DBR further includes a A1GaAs region. The AlGaAs region includes alternating thin layers of AlAs and GaAs. The alternating thin layers of AlAs and GaAs are arranged such the the AlGaAs region appears as a layer of A1GaAs with appropriate concentrations of Al and Ga.

Abstract translation: 分布式布拉格反射器（DBR）具有减少的DX中心。 DBR包括一个AlAs区域。 AlAs区域包括基本上均匀的AlAs。 DBR还包括AlGaAs区域。 AlGaAs区域包括AlAs和GaAs的交替薄层。 AlAs和GaAs的交替薄层被布置成使得AlGaAs区域出现为具有适当浓度的Al和Ga的AlGaAs层。

公开(公告)号：US07295586B2

公开(公告)日：2007-11-13

申请号：US10078473

申请日：2002-02-21

Applicant: Hoki Kwon

Inventor： Hoki Kwon

IPC: H01S5/00

CPC classification number: H01S5/18308 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/66151 ,  H01L29/88 ,  H01S5/18358 ,  H01S5/3054 ,  H01S5/3095 ,  H01S5/3215 ,  H01S2301/173 ,  H01S2304/04

Abstract: GaAs(1−x)Sbx layers are grown by MOCVD. For lattice matching with InP, x is set to 0.5, while beneficial alternatives include setting x to 0.23, 0.3, and 0.4. During MOVCD, TMGa (or TEGa), TMSb, and AsH3 (or TBAs) are used to fabricate the GaAs(1−x )Sbx layer. Beneficially, the GaAs(1−x)Sbx layer's composition is controlled by the ratio of As to Sb. The MOCVD growth temperature is between 500° C. and 650° C. The GaAs(1−x)Sbx layer is beneficially doped using CCl4 or CBr4. A heavily doped GaAs(1−x)Sbx layer can be used to form a tunnel junction with n-doped layers of InP, AlInAs, or with lower bandgap materials such as AlInGaAs or InGaAsP. Such tunnel junctions are useful for producing long wavelength VCSELs.

Abstract translation: 通过MOCVD生长GaAs（1-x）Sb x层。 对于与InP的晶格匹配，x被设置为0.5，而有益的替代方案包括将x设置为0.23,0.3和0.4。 在MOVCD期间，使用TMGa（或TEGa），TMSb和AsH 3（或TBAs）来制造GaAs（1-x）Sb x / SUB>层。 有利地，GaAs（1-x）Sbx层的组成由As与Sb的比例控制。 MOCVD生长温度在500℃和650℃之间。使用CCl 4有利地掺杂GaAs（1-x）Sb x层， SUB>或CBr 4 。 可以使用重掺杂的GaAs（1-x）Sb x层，以形成具有In掺杂，InInP，AlInAs或具有较低带隙材料的隧道结 作为AlInGaAs或InGaAsP。 这种隧道结可用于生产长波长VCSEL。

公开(公告)号：US06888873B2

公开(公告)日：2005-05-03

申请号：US10078422

申请日：2002-02-21

Applicant: Hoki Kwon

Inventor： Hoki Kwon

IPC: H01S5/183 ,  H01S5/343 ,  H01S3/08

CPC classification number: B82Y20/00 ,  H01S5/18308 ,  H01S5/18358 ,  H01S5/3095 ,  H01S5/34306 ,  H01S5/34373 ,  H01S2301/173 ,  H01S2304/04

Abstract: A vertical cavity surface emitting laser having an InP substrate and a lower mirror stack comprised of a plurality of alternating layers of AlPSb and GaPSb over the InP substrate. An InP spacer is over the lower mirror stack. An active region is over the InP spacer, and a tunnel junction is over the active region. Then a top mirror structure comprised of a low-temperature formed first GaAs buffer layer, a high-temperature formed second GaAs seed layer, an insulating structure having an opening, and a GaAs/Al(Ga)As mirror stack that is grown by lateral epitaxial overgrowth.

Abstract translation: 具有InP衬底的垂直腔表面发射激光器和由InP衬底上的AlPSb和GaPSb的多个交替层组成的下反射镜叠层。 InP间隔物在下反射镜堆叠的上方。 有源区域在InP间隔区之上，并且隧道结超过有效区域。 然后是由低温形成的第一GaAs缓冲层，高温形成的第二GaAs种子层，具有开口的绝缘结构和通过侧向生长的GaAs / Al（Ga）As反射镜堆叠构成的顶部镜像结构 外延过度生长。

公开(公告)号：US07433381B2

公开(公告)日：2008-10-07

申请号：US10606104

申请日：2003-06-25

Applicant: Tzu-Yu Wang ,  Hoki Kwon ,  Jae-Hyun Ryou ,  Gyoungwon Park ,  Jin K. Kim

Inventor： Tzu-Yu Wang ,  Hoki Kwon ,  Jae-Hyun Ryou ,  Gyoungwon Park ,  Jin K. Kim

IPC: H01S5/00 ,  H01S3/08

CPC classification number: B82Y20/00 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/18341 ,  H01S5/18372 ,  H01S5/2063 ,  H01S5/34313

Abstract: A long wavelength vertical cavity surface emitting laser having a substrate, a first mirror situated on the substrate, an active region situated on the first mirror, a second mirror situated on the active region. The first mirror may have several pairs of layers with an oxidized layer in one or more pairs of that mirror. The substrate may include InP and the mirror components may be compatible with the InP. The one or more layers in the first mirror may be oxidized via a trench-like approach or other arrangement.

Abstract translation: 具有衬底的长波长垂直腔表面发射激光器，位于衬底上的第一反射镜，位于第一反射镜上的有源区，位于有源区上的第二反射镜。 第一反射镜可以具有几对层，其中一对或多对该反射镜具有氧化层。 衬底可以包括InP，并且镜组件可以与InP兼容。 第一反射镜中的一个或多个层可以通过沟槽状方法或其它布置被氧化。

公开(公告)号：US20060078026A1

公开(公告)日：2006-04-13

申请号：US10961624

申请日：2004-10-08

Applicant: Hoki Kwon

Inventor： Hoki Kwon

IPC: H01S5/00

CPC classification number: H01S5/183 ,  H01S5/305 ,  H01S5/3206

Abstract: Distributed Bragg reflector (DBR) with reduced DX centers. A DBR includes an AlAs region. The AlAs region includes essentially homogeneous AlAs. The DBR further includes a AlGaAs region. The AlGaAs region includes alternating thin layers of AlAs and GaAs. The alternating thin layers of AlAs and GaAs are arranged such the the AlGaAs region appears as a layer of AlGaAs with appropriate concentrations of Al and Ga.

Abstract translation: 分布式布拉格反射器（DBR）具有减少的DX中心。 DBR包括一个AlAs区域。 AlAs区域包括基本上均匀的AlAs。 DBR还包括AlGaAs区域。 AlGaAs区域包括AlAs和GaAs的交替薄层。 AlAs和GaAs的交替薄层被布置成使得AlGaAs区域表现为具有适当浓度的Al和Ga的AlGaAs层。