发明申请
- 专利标题: Semiconductor memory device
- 专利标题(中): 半导体存储器件
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申请号: US11121864申请日: 2005-05-04
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公开(公告)号: US20050248042A1公开(公告)日: 2005-11-10
- 发明人: Jong-Eon Lee , Chul-Soo Kim , Byung-Hoon Jeong , Jun-Hyung Kim , Young-Sun Min
- 申请人: Jong-Eon Lee , Chul-Soo Kim , Byung-Hoon Jeong , Jun-Hyung Kim , Young-Sun Min
- 优先权: KR2004-31470 20040504; KR2004-49168 20040628; KR2005-3857 20050114
- 主分类号: H01L21/8239
- IPC分类号: H01L21/8239 ; H01L21/8242 ; H01L27/02 ; H01L27/105 ; H01L27/108
摘要:
A semiconductor memory device having a memory cell array includes a plurality of first signal lines arranged on the memory cell array in the same direction and a plurality of second signal lines arranged on the memory cell array in a perpendicular direction to the first signal lines. The first signal lines are alternately arranged on at least two layers, and the second signal lines are arranged on a layer where the first signal lines are not arranged.