发明申请
US20050250056A1 Substrate treatment method, substrate treatment apparatus, and method of manufacturing semiconductor device
审中-公开
基板处理方法，基板处理装置以及半导体装置的制造方法
- 专利标题： Substrate treatment method, substrate treatment apparatus, and method of manufacturing semiconductor device
- 专利标题（中）： 基板处理方法，基板处理装置以及半导体装置的制造方法
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申请号： US11114043申请日： 2005-04-26
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公开(公告)号： US20050250056A1公开(公告)日： 2005-11-10
- 发明人: Kenji Kawano , Shinichi Ito
- 申请人： Kenji Kawano , Shinichi Ito
- 优先权： JP2004-131647 20040427
- 主分类号： G03F7/38
- IPC分类号： G03F7/38 ; H01L21/027 ; H01L21/312
摘要：
According to an aspect of the present invention, there is provided a substrate treatment method comprising forming a chemically amplified resist film on a substrate to be treated, and supplying heat to the chemically amplified resist film to perform a heat treatment, wherein the heat treatment includes creating a first temperature state satisfying TT TB in which TT is a temperature at a surface portion of the chemically amplified resist film, and TB is a temperature at an interface portion of the chemically amplified resist film with the substrate to be treated.
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