发明申请
- 专利标题： Process of manufacturing thin film transistor
- 专利标题（中）： 制造薄膜晶体管的工艺
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申请号： US10839170申请日： 2004-05-06
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公开(公告)号： US20050250270A1公开(公告)日： 2005-11-10
- 发明人: Ying-Ming Wu , Yi-Tsai Hsu , Chin-Tzu Kao , Yung-Hsin Wu , Jui-chung Chang
- 申请人： Ying-Ming Wu , Yi-Tsai Hsu , Chin-Tzu Kao , Yung-Hsin Wu , Jui-chung Chang
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/77 ; H01L31/113
摘要：
A process of producing a thin film transistor includes forming a gate line on a substrate by first exposure and development processes. A source electrode, a drain electrode and a semiconductor channel are formed by second exposure and development processes. An island-shaped transistor is formed by third exposure and development processes. A protection layer with a contact hole therein is formed by fourth exposure and development processes. A pixel electrode is formed by fifth exposure and development processes to connect to the contact hole.
公开/授权文献
- US07071045B2 Process of manufacturing thin film transistor 公开/授权日：2006-07-04
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