公开(公告)号：US20050250270A1

公开(公告)日：2005-11-10

申请号：US10839170

申请日：2004-05-06

申请人： Ying-Ming Wu ,  Yi-Tsai Hsu ,  Chin-Tzu Kao ,  Yung-Hsin Wu ,  Jui-chung Chang

发明人： Ying-Ming Wu ,  Yi-Tsai Hsu ,  Chin-Tzu Kao ,  Yung-Hsin Wu ,  Jui-chung Chang

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L31/113

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L29/66765

摘要： A process of producing a thin film transistor includes forming a gate line on a substrate by first exposure and development processes. A source electrode, a drain electrode and a semiconductor channel are formed by second exposure and development processes. An island-shaped transistor is formed by third exposure and development processes. A protection layer with a contact hole therein is formed by fourth exposure and development processes. A pixel electrode is formed by fifth exposure and development processes to connect to the contact hole.

摘要翻译： 制造薄膜晶体管的工艺包括通过第一曝光和显影工艺在衬底上形成栅极线。 通过第二曝光和显影处理形成源电极，漏电极和半导体沟道。 通过第三曝光和显影处理形成岛状晶体管。 通过第四曝光和显影处理形成其中具有接触孔的保护层。 通过第五曝光和显影处理形成像素电极以连接到接触孔。

公开(公告)号：US07071045B2

公开(公告)日：2006-07-04

申请号：US10839170

申请日：2004-05-06

申请人： Ying-Ming Wu ,  Yi-Tsai Hsu ,  Chin-Tzu Kao ,  Yung-Hsin Wu ,  Jui-chung Chang

发明人： Ying-Ming Wu ,  Yi-Tsai Hsu ,  Chin-Tzu Kao ,  Yung-Hsin Wu ,  Jui-chung Chang

IPC分类号： H01L21/336

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L29/66765

摘要： A process of producing a thin film transistor includes forming a gate line on a substrate by first exposure and development processes. A source electrode, a drain electrode and a semiconductor channel are formed by second exposure and development processes. An island-shaped transistor is formed by third exposure and development processes. A protection layer with a contact hole therein is formed by fourth exposure and development processes. A pixel electrode is formed by fifth exposure and development processes to connect to the contact hole.

摘要翻译： 制造薄膜晶体管的工艺包括通过第一曝光和显影工艺在衬底上形成栅极线。 通过第二曝光和显影处理形成源电极，漏电极和半导体沟道。 通过第三曝光和显影处理形成岛状晶体管。 通过第四曝光和显影处理形成其中具有接触孔的保护层。 通过第五曝光和显影处理形成像素电极以连接到接触孔。