发明申请
- 专利标题: Fin field effect transistor device and method of fabricating the same
- 专利标题(中): Fin场效应晶体管器件及其制造方法
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申请号: US11091457申请日: 2005-03-28
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公开(公告)号: US20050250285A1公开(公告)日: 2005-11-10
- 发明人: Jae-Man Yoon , Dong-Gun Park , Choong-Ho Lee , Chul Lee
- 申请人: Jae-Man Yoon , Dong-Gun Park , Choong-Ho Lee , Chul Lee
- 优先权: KR2004-31467 20040504
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L21/336 ; H01L21/8234 ; H01L21/84 ; H01L29/786 ; H01L29/94
摘要:
Methods of forming field effect transistors (FETs) having fin-shaped active regions include patterning a semiconductor substrate to define a fin-shaped semiconductor active region therein, which is surrounded by a trench. At least an upper portion of the fin-shaped semiconductor active region is covered with a sacrificial layer. This sacrificial layer is selectively etched-back to define sacrificial spacers on sidewalls of the fin-shaped semiconductor active region. The electrically insulating region is formed on the sacrificial spacers. The sacrificial spacers are then removed by selectively etching the sacrificial spacers using the electrically insulating region as an etching mask. An insulated gate electrode is then formed on the sidewalls of the fin-shaped semiconductor active region.