发明申请
- 专利标题： Semiconductor device and image display device
- 专利标题（中）： 半导体装置及图像显示装置
-
申请号： US11109818申请日： 2005-04-20
-
公开(公告)号： US20050253195A1公开(公告)日： 2005-11-17
- 发明人: Yoshihiko Toyoda , Takao Sakamoto , Kazuyuki Sugahara , Naoki Nakagawa
- 申请人： Yoshihiko Toyoda , Takao Sakamoto , Kazuyuki Sugahara , Naoki Nakagawa
- 申请人地址： JP Tokyo
- 专利权人： MITSUBISHI DENKI KABUSHIKI KAISHA
- 当前专利权人： MITSUBISHI DENKI KABUSHIKI KAISHA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2004-125489 20040421; JP2005-037949 20050215
- 主分类号： H01L27/08
- IPC分类号： H01L27/08 ; H01L21/00 ; H01L21/336 ; H01L21/77 ; H01L21/8234 ; H01L21/8238 ; H01L27/088 ; H01L27/092 ; H01L27/12 ; H01L29/786
摘要：
A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor including a source region, a drain region, a channel region having a predetermined channel length, a GOLD region and an LDD region having an impurity concentration lower than the impurity concentration of the source region, a GOLD region and an LDD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The gate electrode is formed overlapping with and facing the channel region and the GOLD region. A semiconductor device is obtained, directed to improving source-drain breakdown voltage and AC stress resistance, and achieving desired current property.
信息查询
IPC分类:
