Invention Application
US20050254282A1 REFERENCE GENERATOR SYSTEM AND METHODS FOR READING FERROELECTRIC MEMORY CELLS USING REDUCED BITLINE VOLTAGES 有权
参考发电机系统和使用减少的电子伏特读取电磁记忆体的方法

  • Patent Title: REFERENCE GENERATOR SYSTEM AND METHODS FOR READING FERROELECTRIC MEMORY CELLS USING REDUCED BITLINE VOLTAGES
  • Patent Title (中): 参考发电机系统和使用减少的电子伏特读取电磁记忆体的方法
  • Application No.: US10847412
    Application Date: 2004-05-17
  • Publication No.: US20050254282A1
    Publication Date: 2005-11-17
  • Inventor: Scott SummerfeltHugh McAdams
  • Applicant: Scott SummerfeltHugh McAdams
  • Main IPC: G11C5/14
  • IPC: G11C5/14 G11C11/22
REFERENCE GENERATOR SYSTEM AND METHODS FOR READING FERROELECTRIC MEMORY CELLS USING REDUCED BITLINE VOLTAGES
Abstract:
Methods (200) and systems (108) are provided for reading data from ferroelectric memory cells (106) in which charge is removed from a sense amp input (SABL/SABLB) prior to application of a plateline signal (PL) to the target cell capacitor (CFE). Where the sense amp input (SABL/SABLB) is initially precharged to zero volts, the extraction of charge provides a negative voltage on the data bitline (BL/BLB) when the plateline signal (PL) is applied, allowing adequate voltage to be applied across the cell capacitor (CFE) together with reduced plateline voltages (PL).
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