发明申请
US20050257747A1 Worktable device, film formation apparatus, and film formation method for semiconductor process
审中-公开
工作台装置，成膜装置和半导体工艺的成膜方法
- 专利标题： Worktable device, film formation apparatus, and film formation method for semiconductor process
- 专利标题（中）： 工作台装置，成膜装置和半导体工艺的成膜方法
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申请号： US11192047申请日： 2005-07-29
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公开(公告)号： US20050257747A1公开(公告)日： 2005-11-24
- 发明人: Satoshi Wakabayashi , Shinya Okabe , Seishi Murakami , Masato Morishima , Kunihiro Tada
- 申请人： Satoshi Wakabayashi , Shinya Okabe , Seishi Murakami , Masato Morishima , Kunihiro Tada
- 优先权： JP2003-024264 20030131; JP2003-199377 20030718
- 主分类号： C23C16/44
- IPC分类号： C23C16/44 ; C23C16/458 ; C23C16/46 ; H01L21/00 ; H01L21/285 ; C23C16/00
摘要：
A worktable device is disposed inside a film formation process container for a semiconductor process. The worktable device includes a worktable including a top surface to place a target substrate thereon, and a side surface extending downward from the top surface, and a heater disposed in the worktable and configured to heat the substrate through the top surface. A CVD pre-coat layer covers the top surface and the side surface of the worktable. The pre-coat layer has a thickness not less than a thickness which substantially saturates the amount of radiant heat originating from heating of the heater and radiated from the top surface and the side surface of the worktable.