发明申请
- 专利标题： MOSFET structure with high mechanical stress in the channel
- 专利标题（中）： MOSFET结构在通道中具有高机械应力
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申请号： US10851830申请日： 2004-05-21
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公开(公告)号： US20050260808A1公开(公告)日： 2005-11-24
- 发明人: Xiangdong Chen , Dureseti Chidambarrao , Oleg Gluschenkov , Brian Greene , Kern Rim , Haining Yang
- 申请人： Xiangdong Chen , Dureseti Chidambarrao , Oleg Gluschenkov , Brian Greene , Kern Rim , Haining Yang
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8234 ; H01L21/8238 ; H01L29/78
摘要：
The present invention provides a semiconducting device including at least one gate region including a gate conductor located on a surface of a substrate, the substrate having an exposed surface adjacent the gate region; a silicide contact located adjacent the exposed surface; and a stress inducing liner located on the silicide contact, the exposed surface of the substrate adjacent to the gate region and the at least one gate region, wherein the stress inducing liner provides a stress to a device channel portion of the substrate underlying the gate region. The stress produced on the device channel is a longitudinal stress on the order of about 200 MPa to about 2000 MPa. The present invention also provides a method for forming the above-described semiconducting device.
公开/授权文献
- US07002209B2 MOSFET structure with high mechanical stress in the channel 公开/授权日：2006-02-21
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