发明申请
- 专利标题: Electrostatic actuator formed by a semiconductor manufacturing process
- 专利标题(中): 由半导体制造工艺形成的静电致动器
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申请号: US10521055申请日: 2003-08-05
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公开(公告)号: US20050264617A1公开(公告)日: 2005-12-01
- 发明人: Manabu Nishimura , Takahiko Kuroda , Shuya Abe , Makoto Tanaka , Mitsugu Irinoda , Kenichiroh Hashimoto
- 申请人: Manabu Nishimura , Takahiko Kuroda , Shuya Abe , Makoto Tanaka , Mitsugu Irinoda , Kenichiroh Hashimoto
- 优先权: JP2002-228117 20020806; JP2002-262345 20020909; JP2002-264243 20020910; JP2002-266332 20020912; JP2002-270139 20020917; JP2002-341752 20021126
- 国际申请: PCT/JP03/09929 WO 20030805
- 主分类号: B41J2/14
- IPC分类号: B41J2/14 ; B41J2/16 ; B41J2/045
摘要:
An electrostatic actuator has high-reliability and less variation in characteristics. An electrode (12a) is formed on a substrate (1), and a plurality of partition parts (50a) are formed on the electrode. A vibration plate (19) is formed on the partition parts (50a), and is deformable by an electrostatic force generated by a voltage applied to the electrode (12a) so that an air gap (14a) is formed between the partition parts (50a) by etching a part of a sacrifice layer (14) formed between the electrode (12a) and the vibration plate (19). The partition parts (50a) are formed of remaining parts of the sacrifice layer (14) after the etching.
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