发明申请
- 专利标题: Resist material and pattern formation method
- 专利标题(中): 抗蚀材料和图案形成方法
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申请号: US11128438申请日: 2005-05-13
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公开(公告)号: US20050266337A1公开(公告)日: 2005-12-01
- 发明人: Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
- 申请人: Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
- 优先权: JP2004-157420 20040527; JP2005-128359 20050426
- 主分类号: G03C1/492
- IPC分类号: G03C1/492 ; G03F7/004 ; G03F7/039 ; G03F7/20
摘要:
A resist material has a base polymer containing a compound including a copolymer of a first unit represented by a general formula of the following Chemical Formula 1 and a second unit represented by a general formula of the following Chemical Formula 2: wherein R1, R2, R3, R7 and R8 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R9 is a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20.
公开/授权文献
- US07378216B2 Resist material and pattern formation method 公开/授权日:2008-05-27
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