Barrier structure for semiconductor devices

Invention Application

US20050266679A1 Barrier structure for semiconductor devices 审中-公开

Title translation: 半导体器件的阻挡结构

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Patent Title: Barrier structure for semiconductor devices
Patent Title (中): 半导体器件的阻挡结构
Application No.: US10995752

Application Date: 2004-11-23
Publication No.: US20050266679A1

Publication Date: 2005-12-01
Inventor: Jing-Cheng Lin , Shau-Lin Shue
Applicant: Jing-Cheng Lin , Shau-Lin Shue
Main IPC: H01L21/768
IPC: H01L21/768 ; H01L21/4763 ; H01L23/52

Barrier structure for semiconductor devices

Abstract:

A via having a unique barrier layer structure is provided. In an embodiment, a via is formed by forming a barrier layer in a via. The barrier layer along the bottom of the via is partially or completely removed, and the via is filled with a conductive material. In another embodiment, a first barrier layer is formed along the bottom and sidewalls of the via. Thereafter, the first barrier layer along the bottom of the via is partially or completely removed, and a second barrier layer is formed.

Abstract(Chinese):

提供具有独特的阻挡层结构的通孔。在一个实施例中，通孔在通孔中形成阻挡层而形成通孔。沿着通孔底部的阻挡层被部分地或完全去除，并且通孔用导电材料填充。在另一个实施例中，沿着通孔的底部和侧壁形成第一阻挡层。此后，沿通孔底部的第一阻挡层被部分地或完全地去除，形成第二阻挡层。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/71	..限定在组H01L21／70中的器件的特殊部件的制造（H01L21/28，H01L21/44，H01L21/48优先）
H01L21/768	...利用互连在器件中的分离元件间传输电流