发明申请
- 专利标题： Strained Si on multiple materials for bulk or SOI substrates
- 专利标题（中）： 应变Si在多种材料上用于体或SOI衬底
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申请号： US10859736申请日： 2004-06-03
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公开(公告)号： US20050269561A1公开(公告)日： 2005-12-08
- 发明人: Dureseti Chidambarrao , Omer Dokumaci , Oleg Gluschenkov , Huilong Zhu
- 申请人： Dureseti Chidambarrao , Omer Dokumaci , Oleg Gluschenkov , Huilong Zhu
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/8238 ; H01L21/84 ; H01L27/12 ; H01L29/06 ; H01L29/10 ; H01L29/78
摘要：
The present invention provides a strained-Si structure, in which the nFET regions of the structure are strained in tension and the pFET regions of the structure are strained in compression. Broadly the strained-Si structure comprises a substrate, a first layered stack atop the substrate, the first layered stack comprising a first Si-containing portion of the substrate, a compressive layer atop the Si-containing portion of the substrate, and a semiconducting silicon layer atop the compressive layer; and a second layered stack atop the substrate, the second layered stack comprising a second-silicon containing layer portion of the substrate, a tensile layer atop the second Si-containing portion of the substrate, and a second semiconducting silicon-layer atop the tensile layer.