发明申请
- 专利标题： Semiconductor device and manufacturing method of the same
- 专利标题（中）： 半导体器件及其制造方法相同
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申请号： US11054603申请日： 2005-02-10
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公开(公告)号： US20050269704A1公开(公告)日： 2005-12-08
- 发明人: Koujiro Kameyama , Akira Suzuki , Yoshio Okayama
- 申请人： Koujiro Kameyama , Akira Suzuki , Yoshio Okayama
- 申请人地址： JP Moriguchi-city 570-8677
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Moriguchi-city 570-8677
- 优先权： JP2004-0040409 20040217
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/3205 ; H01L21/60 ; H01L21/768 ; H01L23/12 ; H01L23/48 ; H01L29/74 ; H01L21/4763
摘要：
This invention provides a semiconductor device and a manufacturing method thereof which can minimize deterioration of electric characteristics of the semiconductor device without increasing an etching process. In the semiconductor device of the invention, a pad electrode layer formed of a first barrier layer and an aluminum layer laminated thereon is formed on a top surface of a semiconductor substrate. A supporting substrate is further attached on the top surface of the semiconductor substrate. A second barrier layer is formed on a back surface of the semiconductor substrate and in a via hole formed from the back surface of the semiconductor substrate to the first barrier layer. Furthermore, a re-distribution layer is formed in the via hole so as to completely fill the via hole or so as not to completely fill the via hole. A ball-shaped terminal is formed on the re-distribution layer.
公开/授权文献
- US07256497B2 Semiconductor device with a barrier layer and a metal layer 公开/授权日：2007-08-14