发明申请
US20050269708A1 Tungsten encapsulated copper interconnections using electroplating 审中-公开
使用电镀的钨封装铜互连

Tungsten encapsulated copper interconnections using electroplating
摘要:
An interconnection structure is provided wherein comprises a substrate having a dielectric layer with a via opening therein; wherein the opening has a barrier layer; and electrodeposited copper.
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