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发明申请
US20050270826A1 Semiconductor memory device and method for producing a semiconductor memory device 审中-公开
半导体存储器件及半导体存储器件的制造方法

Semiconductor memory device and method for producing a semiconductor memory device
摘要：
A semiconductor memory device with a phase transformation memory effect includes at least one memory element in a semiconductor substrate, and a cavity arrangement including at least one cavity in spatial proximity to the respective memory element. The cavity is in spatial arrangement with the respective memory element so as to reduce thermal coupling of the respective memory element to the areas surrounding the memory element, which also reduces the thermal conductivity between memory element and the areas surrounding the memory element.
摘要（中）：

具有相变存储器效应的半导体存储器件包括半导体衬底中的至少一个存储器元件，以及包括至少一个空腔中相应于存储器元件的空腔的腔体结构。 空腔与相应的存储元件处于空间上，以便减少相应存储元件与存储元件周围区域的热耦合，这也降低了存储元件与存储元件周围区域之间的热导率。

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