发明申请
- 专利标题： Low-k dielectric structure and method
- 专利标题（中）： 低k电介质结构及方法
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申请号： US11185190申请日： 2005-07-19
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公开(公告)号： US20050272248A1公开(公告)日： 2005-12-08
- 发明人: Grant M. Kloster , Xiarong Morrow , Jihperng Leu
- 申请人： Grant M. Kloster , Xiarong Morrow , Jihperng Leu
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L21/76
摘要：
A low-k dielectric sacrificial material is formed within a microelectronic structure covered with a suitable porous or low density permeable material. At an appropriate time, the underlying sacrificial material is decomposed and diffused away through the overlying permeable material. As a result, at least one void is created, contributing to desirable dielectric characteristics.
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