发明申请
- 专利标题： Frequency adjustment method of surface acoustic wave device, surface acoustic wave device, and electronic device
- 专利标题（中）： 表面声波装置，表面声波装置和电子装置的频率调整方法
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申请号： US11142472申请日： 2005-06-02
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公开(公告)号： US20050275487A1公开(公告)日： 2005-12-15
- 发明人: Masahiro Oshio
- 申请人： Masahiro Oshio
- 申请人地址： JP Tokyo
- 专利权人： SEIKO EPSON CORPORATION
- 当前专利权人： SEIKO EPSON CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2004-171164 20040609; JP2005-031525 20050208
- 主分类号： H03H3/10
- IPC分类号： H03H3/10 ; H03H9/02 ; H03H9/05 ; H03H9/10 ; H03H9/64
摘要：
A method for adjusting frequency of a surface acoustic wave device includes performing a frequency adjustment. The surface acoustic wave device includes a substrate including at least one of a lithium tantalate substrate, a lithium niobate substrate, and a lithium tetraborate substrate. The surface acoustic wave device further includes an IDT electrode formed on the substrate that excites a pseudo-longitudinal leaky surface acoustic wave. The performing includes frequency adjustment by adjusting a thickness of the substrate at a side opposite in a thickness direction to a side on which the IDT electrode is formed.
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