发明申请
- 专利标题： MICROELECTRONIC ELEMENT HAVING TRENCH CAPACITORS WITH DIFFERENT CAPACITANCE VALUES
- 专利标题（中）： 具有不同电容值的电容器的微电子元件
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申请号： US10710146申请日： 2004-06-22
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公开(公告)号： US20050280063A1公开(公告)日： 2005-12-22
- 发明人: Kangguo Cheng , Johnathan Faltermeier , David Hanson , Carl Radens
- 申请人： Kangguo Cheng , Johnathan Faltermeier , David Hanson , Carl Radens
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/334
- IPC分类号： H01L21/334 ; H01L21/8242 ; H01L27/108 ; H01L29/94
摘要：
A microelectronic element is provided having a major surface, the microelectronic element including a first capacitor formed on a sidewall of a first trench, the first trench being elongated in a downwardly extending direction from the major surface. The microelectronic element further includes a second capacitor formed on a sidewall of a second trench, the second trench being elongated in a downwardly extending direction from the major surface, wherein a top of the first capacitor is disposed at a first depth from the major surface, and a top of the second capacitor is disposed at a second depth from the major surface.
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