发明申请
- 专利标题： Semiconductor element and display device using the same
- 专利标题（中）： 半导体元件和使用其的显示装置
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申请号： US11196251申请日： 2005-08-04
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公开(公告)号： US20050282305A1公开(公告)日： 2005-12-22
- 发明人: Satoshi Murakami , Masahiko Hayakawa , Shunpei Yamazaki
- 申请人： Satoshi Murakami , Masahiko Hayakawa , Shunpei Yamazaki
- 申请人地址： JP Atsugi-shi
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2002-107197 20020409
- 主分类号： G02F1/1362
- IPC分类号： G02F1/1362 ; H01L21/336 ; H01L27/32 ; H01L21/00 ; H01L29/04 ; H01L29/10 ; H01L31/036 ; H01L31/0376 ; H01L31/20
摘要：
Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
公开/授权文献
- US07999263B2 Semiconductor element and display device using the same 公开/授权日：2011-08-16
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