发明申请
- 专利标题: Charge recycling power gate
- 专利标题(中): 充电回收电源门
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申请号: US10880111申请日: 2004-06-29
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公开(公告)号: US20050285628A1公开(公告)日: 2005-12-29
- 发明人: Suhwan Kim , Daniel Knebel , Stephen Kosonocky
- 申请人: Suhwan Kim , Daniel Knebel , Stephen Kosonocky
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H03K19/00
- IPC分类号: H03K19/00 ; H03K19/094
摘要:
A charge recycling power gate and corresponding method are provided for using a charge sharing effect between a capacitive load of a functional unit and a parasitic capacitance of a charge recycling means to turn on a switching means between a virtual ground and a ground, the charge recycling power gate including a first transistor, a virtual ground in signal communication with a first terminal of the first transistor, a ground in signal communication with a second terminal of the first transistor, a capacitor having a first terminal in signal communication with a third terminal of the first transistor and a second terminal in signal communication with the ground, and a second transistor having a first terminal in signal communication with the virtual ground and a second terminal in signal communication with the third terminal of the first transistor.
公开/授权文献
- US07138825B2 Charge recycling power gate 公开/授权日:2006-11-21