发明申请
- 专利标题： Semiconductor device and source voltage control method
- 专利标题（中）： 半导体器件和源极电压控制方法
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申请号： US11165008申请日： 2005-06-23
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公开(公告)号： US20050286328A1公开(公告)日： 2005-12-29
- 发明人: Kazuhide Kurosaki , Shigekazu Yamada , Masaru Yano
- 申请人： Kazuhide Kurosaki , Shigekazu Yamada , Masaru Yano
- 专利权人： Spansion LLC
- 当前专利权人： Spansion LLC
- 主分类号： G11C7/00
- IPC分类号： G11C7/00 ; G11C16/30
摘要：
The precharge circuit is provided for precharging, before programming the data, the voltage of the source line ARVSS commonly connected to the memory cells provided in the same sector. The voltage of the source line ARVSS of the memory cell MC is precharged before programming the data, and the voltage of the source line ARVSS of the memory cell MC is not lowered at the time of programming the data, even if the data programming period is shortened. It is thus possible to prevent the leak current during the programming and program the data into the memory cell MC optimally.
公开/授权文献
- US07206232B2 Semiconductor device and source voltage control method 公开/授权日：2007-04-17
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