发明申请
- 专利标题: Interconnect junction providing reduced current crowding and method of manufacturing same
- 专利标题(中): 互连连接提供减少的电流拥挤及其制造方法
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申请号: US10878708申请日: 2004-06-28
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公开(公告)号: US20050287784A1公开(公告)日: 2005-12-29
- 发明人: Harry Chuang , Chen-Chia Wang
- 申请人: Harry Chuang , Chen-Chia Wang
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号: H01L21/44
- IPC分类号: H01L21/44 ; H01L21/768 ; H01L23/528
摘要:
Disclosed herein are a junction where electrical interconnects on a semiconductor substrate intersect and a method of manufacturing a junction where electrical interconnects on a semiconductor substrate intersect is disclosed. In one embodiment, the junction includes a portion of at least one current providing electrical interconnect having a length parallel to a longitudinal axis thereof and configured to provide a flow of electrical current. In addition, the junction includes a portion of at least one current receiving electrical interconnect having a length parallel to a longitudinal axis thereof and configured to intersect with the at least one current providing interconnect at the junction in order to receive the flow of electrical current from the at least one current providing interconnect. Also, in such an embodiment, the junction includes at least one current directing feature positioned between the current providing and current receiving interconnects, and oriented substantially non-perpendicular to the longitudinal axis of the at least one current providing interconnect.
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