发明申请
- 专利标题： PREVENTING CAVITATION IN HIGH ASPECT RATIO DIELECTRIC REGIONS OF SEMICONDUCTOR DEVICE
- 专利标题（中）： 在半导体器件的高比例电介质区域中防止蚀刻
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申请号： US10710227申请日： 2004-06-28
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公开(公告)号： US20050287798A1公开(公告)日： 2005-12-29
- 发明人: Paul Agnello , Rajeev Malik , K. Muller
- 申请人： Paul Agnello , Rajeev Malik , K. Muller
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/336 ; H01L21/4763 ; H01L21/768 ; H01L21/8234
摘要：
Methods for preventing cavitation in high aspect ratio dielectric regions in a semiconductor device, and the device so formed, are disclosed. The invention includes depositing a first dielectric in the high aspect ratio dielectric region between a pair of structures, and then removing the first dielectric to form a bearing surface adjacent each structure. The bearing surface prevents cavitation of the interlayer dielectric that subsequently fills the high aspect ratio region.
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