The present disclosure describes an embodiment of an apparatus comprising a first dielectric layer having a first variation of capacitance with temperature, a second dielectric layer having a second variation of capacitance with temperature, the second variation of capacitance with temperature being different than the first variation of capacitance with temperature, and a conductive layer sandwiched between the first and second dielectric layers. Also described is an embodiment of a process comprising forming a first dielectric layer comprising a dielectric having a first composition, stacking a conductive layer on the first dielectric layer, and stacking a second dielectric layer on the conductive layer, the second dielectric layer having a second composition different than the first composition. Other embodiments are also described and claimed.