发明申请
US20060001070A1 Capacitor of a memory device and fabrication method thereof 失效
存储器件的电容器及其制造方法

Capacitor of a memory device and fabrication method thereof
摘要:
A capacitor of a memory device, and a method of fabricating the same, includes a lower electrode electrically coupled to a doping region of a transistor structure, the lower electrode having a metal electrode and a metal oxide electrode, a ferroelectric layer covering and extending laterally along the lower electrode, and an upper electrode formed on the ferroelectric layer.
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