发明申请
- 专利标题： Capacitor of a memory device and fabrication method thereof
- 专利标题（中）： 存储器件的电容器及其制造方法
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申请号： US11120184申请日： 2005-05-03
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公开(公告)号： US20060001070A1公开(公告)日： 2006-01-05
- 发明人: Young-soo Park , Jung-hyun Lee , Choong-rae Cho , June-mo Koo , Suk-pil Kim , Sang-min Shin
- 申请人： Young-soo Park , Jung-hyun Lee , Choong-rae Cho , June-mo Koo , Suk-pil Kim , Sang-min Shin
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2004-0030928 20040503
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L27/108
摘要：
A capacitor of a memory device, and a method of fabricating the same, includes a lower electrode electrically coupled to a doping region of a transistor structure, the lower electrode having a metal electrode and a metal oxide electrode, a ferroelectric layer covering and extending laterally along the lower electrode, and an upper electrode formed on the ferroelectric layer.
公开/授权文献
- US07250649B2 Capacitor of a memory device and fabrication method thereof 公开/授权日：2007-07-31
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