发明申请
US20060001081A1 Nonvolatile semiconductor memory device and manufacturing method thereof
审中-公开
非易失性半导体存储器件及其制造方法
- 专利标题： Nonvolatile semiconductor memory device and manufacturing method thereof
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US11166114申请日： 2005-06-27
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公开(公告)号： US20060001081A1公开(公告)日： 2006-01-05
- 发明人: Yoshitaka Sasago , Takashi Kobayashi , Naohiro Hosoda , Tetsuo Adachi , Masataka Kato
- 申请人： Yoshitaka Sasago , Takashi Kobayashi , Naohiro Hosoda , Tetsuo Adachi , Masataka Kato
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 优先权： JP2004-196825 20040702
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A leakage current flowing between data lines of a nonvolatile semiconductor memory is reduced. In a memory array of a nonvolatile semiconductor memory device having an AND type flash memory, a concave portion is formed in a junction isolation area between adjacent word limes and between adjacent assist gate wirings AGL, and the height of a main surface (first main surface) of a semiconductor substrate in the region where the concave portion is formed is made lower than that of the main surface (second main surface) of the semiconductor substrate to which an assist gate wiring is facing. As a result, it is possible to control the leakage current that flows between the drain line and source line in the aforementioned junction isolation region during operation of a flash memory.
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