- 专利标题： Removing a high-k gate dielectric
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申请号： US10882733申请日： 2004-06-30
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公开(公告)号： US20060003499A1公开(公告)日： 2006-01-05
- 发明人: Mark Doczy , Robert Norman , Justin Brask , Jack Kavalieros , Matthew Metz , Suman Datta , Robert Chau
- 申请人： Mark Doczy , Robert Norman , Justin Brask , Jack Kavalieros , Matthew Metz , Suman Datta , Robert Chau
- 主分类号： H01L21/335
- IPC分类号： H01L21/335 ; H01L21/425 ; H01L21/44
摘要：
A metal oxide layer on a substrate is converted at least partly to a metal layer. At least part of the metal layer is covered by an oxidation resistant cover. The covered layer and underlying metal may be removed, for example, using acid.
公开/授权文献
- US07575991B2 Removing a high-k gate dielectric 公开/授权日：2009-08-18