发明申请
- 专利标题： Method of passivating oxide/compound semiconductor interface
- 专利标题（中）： 钝化氧化物/化合物半导体界面的方法
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申请号： US10882482申请日： 2004-06-30
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公开(公告)号： US20060003595A1公开(公告)日： 2006-01-05
- 发明人: Matthias Passlack , Nicholas Medendorp
- 申请人： Matthias Passlack , Nicholas Medendorp
- 主分类号： H01L21/469
- IPC分类号： H01L21/469 ; H01L21/31 ; H01L21/4763 ; H01L21/3205
摘要：
The present invention provides a method of passivating an oxide compound disposed on a III-V semiconductor substrate. The method is intended for use with dielectric stacks, gallate compounds, and gallium compounds used in gate quality oxide layers. The method includes heating a semiconductor structure at an elevated temperature of between about 230° C. and about 400° C. The semiconductor structure is exposed to an atmosphere that is supersaturated with water vapor or vapor of deuterium oxide. The exposure takes place at elevated temperature and continues for a period of time between about 5 minutes to about 120 minutes. It has been found that the method of the present invention results in a semiconductor product that has significantly improved performance characteristics over semiconductors that are not passivated, or that use a dry hydrogen method of passivation.
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