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公开(公告)号：US20060003595A1
公开(公告)日：2006-01-05
申请号：US10882482
申请日：2004-06-30
IPC分类号： H01L21/469 , H01L21/31 , H01L21/4763 , H01L21/3205
CPC分类号： H01L21/3105 , H01L21/28264
摘要： The present invention provides a method of passivating an oxide compound disposed on a III-V semiconductor substrate. The method is intended for use with dielectric stacks, gallate compounds, and gallium compounds used in gate quality oxide layers. The method includes heating a semiconductor structure at an elevated temperature of between about 230° C. and about 400° C. The semiconductor structure is exposed to an atmosphere that is supersaturated with water vapor or vapor of deuterium oxide. The exposure takes place at elevated temperature and continues for a period of time between about 5 minutes to about 120 minutes. It has been found that the method of the present invention results in a semiconductor product that has significantly improved performance characteristics over semiconductors that are not passivated, or that use a dry hydrogen method of passivation.
摘要翻译： 本发明提供一种钝化设置在III-V半导体衬底上的氧化物的方法。 该方法旨在用于栅极质量氧化物层中使用的电介质叠层，没食子酸酯化合物和镓化合物。 该方法包括在约230℃和约400℃之间的升高的温度下加热半导体结构。将半导体结构暴露于用水蒸气或氧化氘蒸汽过饱和的气氛中。 曝光在升高的温度下进行，并持续约5分钟至约120分钟之间的时间。 已经发现，本发明的方法产生了与不被钝化的半导体相比具有明显改善的性能特性的半导体产品，或者使用干法氢化钝化方法。
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公开(公告)号：US07202182B2
公开(公告)日：2007-04-10
申请号：US10882482
申请日：2004-06-30
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/3105 , H01L21/28264
摘要： The present invention provides a method of passivating an oxide compound disposed on a III-V semiconductor substrate. The method is intended for use with dielectric stacks, gallate compounds, and gallium compounds used in gate quality oxide layers. The method includes heating a semiconductor structure at an elevated temperature of between about 230° C. and about 400° C. The semiconductor structure is exposed to an atmosphere that is supersaturated with water vapor or vapor of deuterium oxide. The exposure takes place at elevated temperature and continues for a period of time between about 5 minutes to about 120 minutes. It has been found that the method of the present invention results in a semiconductor product that has significantly improved performance characteristics over semiconductors that are not passivated, or that use a dry hydrogen method of passivation.
摘要翻译： 本发明提供一种钝化设置在III-V半导体衬底上的氧化物的方法。 该方法旨在用于栅极质量氧化物层中使用的电介质叠层，没食子酸酯化合物和镓化合物。 该方法包括在约230℃和约400℃之间的升高的温度下加热半导体结构。将半导体结构暴露于用水蒸气或氧化氘蒸气过饱和的气氛中。 曝光在升高的温度下进行，并持续约5分钟至约120分钟之间的时间。 已经发现，本发明的方法产生了与不被钝化的半导体相比具有明显改善的性能特性的半导体产品，或者使用干法氢化钝化方法。
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3.发明申请公开(公告)号：US20050221623A1
公开(公告)日：2005-10-06
申请号：US11136845
申请日：2005-05-25
IPC分类号： C23C14/08 , C30B23/02 , C30B29/16 , H01L21/28 , H01L21/31 , H01L21/316 , H01L29/423 , H01L29/51
CPC分类号： H01L29/513 , C23C14/08 , C30B23/02 , C30B29/16 , H01L21/02112 , H01L21/02192 , H01L21/022 , H01L21/02269 , H01L21/28194 , H01L21/28264 , H01L21/31604 , H01L21/31666 , H01L29/4232 , H01L29/511 , H01L29/517
摘要： A compound semiconductor structure is provided, which includes a GaAs-based supporting semiconductor structure having a surface on which a dielectric material is to be formed. A first layer of gallium oxide is located on the surface of the supporting semiconductor structure to form an interface therewith. A second layer of a Ga—Gd oxide is disposed on the first layer. The GaAs-based supporting semiconductor structure may be a GaAs-based heterostructure such as an at least partially completed semiconductor device (e.g., a metal-oxide field effect transistor, a heterojunction bipolar transistor, or a semiconductor laser). In this manner a dielectric layer structure is provided which has both a low defect density at the oxide-GaAs interface and a low oxide leakage current density because the dielectric structure is formed from a layer of Ga2O3 followed by a layer of Ga—Gd-oxide. The Ga2O3 layer is used to form a high quality interface with the GaAs-based supporting semiconductor structure while the Ga—Gd-oxide provides a low oxide leakage current density.
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公开(公告)号：US06963090B2
公开(公告)日：2005-11-08
申请号：US10339379
申请日：2003-01-09
IPC分类号： H01L21/336 , H01L31/072
CPC分类号： H01L29/402 , H01L29/42376 , H01L29/517 , H01L29/66522 , H01L29/7784 , H01L29/7785
摘要： An implant-free enhancement mode metal-oxide semiconductor field effect transistor (EMOSFET) is provided. The EMOSFET has a III-V compound semiconductor substrate and an epitaxial layer structure overlying the III-V compound semiconductor substrate. The epitaxial material layer has a channel layer and at least one doped layer. A gate oxide layer overlies the epitaxial layer structure. The EMOSFET further includes a metal gate electrode overlying the gate oxide layer and source and drain ohmic contacts overlying the epitaxial layer structure.
摘要翻译： 提供无植入物的增强型金属氧化物半导体场效应晶体管（EMOSFET）。 EMOSFET具有III-V族化合物半导体衬底和覆盖III-V族化合物半导体衬底的外延层结构。 外延材料层具有沟道层和至少一个掺杂层。 栅极氧化层覆盖在外延层结构上。 EMOSFET还包括覆盖栅极氧化物层的金属栅极电极和覆盖外延层结构的源极和漏极欧姆触点。
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公开(公告)号：US07805048B2
公开(公告)日：2010-09-28
申请号：US11431304
申请日：2006-05-10
申请人： Ban P. Loh , Nicholas Medendorp
发明人： Ban P. Loh , Nicholas Medendorp
IPC分类号： G02B6/10
CPC分类号： H01L33/54 , G02F1/133603 , H01L33/60 , H01L2224/45144 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： Sideways emission enhancements are described for light emitting diode (LED) lighting solutions having a wide variety of applications. While a typical LED lighting device has a substantial portion of its light emitted near a normal to the semiconductor photonic chip emitting the light, the present approach may suitable provide a compact, easily manufacturable device with good thermal design characteristics and a changed emission pattern without changing the horizontal mounting plane of the semiconductor photonic chip.
摘要翻译： 针对具有各种应用的发光二极管（LED）照明解决方案描述了侧向发射增强。 虽然典型的LED照明装置的光的大部分发射在发射光的半导体光子芯片的正常附近，但是本方法可以适合提供具有良好的热设计特性和改变的发射图案的紧凑的，易于制造的装置，而不改变 半导体光子芯片的水平安装平面。
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6.发明申请Light emitting device packages, light emitting diode (LED) packages and related methods 有权发光器件封装，发光二极管（LED）封装及相关方法公开(公告)号：US20080054286A1
公开(公告)日：2008-03-06
申请号：US11895795
申请日：2007-08-27
申请人： Ban Loh , Peter Andrews , Nicholas Medendorp
发明人： Ban Loh , Peter Andrews , Nicholas Medendorp
CPC分类号： H01L33/52 , H01L33/54 , H01L33/58 , H01L2224/48091 , H01L2224/48471 , H01L2924/00014
摘要： Light emitting device packages, light emitting diode (LED) packages and related methods are disclosed. According to one aspect, a light emitting device package is provided. The package includes a mounting pad adapted for attachment of a light emitting device. A lens coupler is attached to the mounting pad and defines an opening for containing the light emitting device and a quantity of encapsulant. The lens coupler includes a surface defining a depression which comprises at least one edge that shapes an outer surface of the encapsulant.
摘要翻译： 公开了发光器件封装，发光二极管（LED）封装和相关方法。 根据一个方面，提供一种发光器件封装。 该包装包括适于附接发光装置的安装垫。 透镜耦合器附接到安装焊盘并且限定用于容纳发光器件的开口和一定数量的密封剂。 透镜耦合器包括限定凹陷的表面，其包括形成密封剂的外表面的至少一个边缘。
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公开(公告)号：US20070274667A1
公开(公告)日：2007-11-29
申请号：US11431304
申请日：2006-05-10
申请人： Ban Loh , Nicholas Medendorp
发明人： Ban Loh , Nicholas Medendorp
IPC分类号： G02B6/10
CPC分类号： H01L33/54 , G02F1/133603 , H01L33/60 , H01L2224/45144 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： Sideways emission enhancements are described for light emitting diode (LED) lighting solutions having a wide variety of applications. While a typical LED lighting device has a substantial portion of its light emitted near a normal to the semiconductor photonic chip emitting the light, the present approach may suitable provide a compact, easily manufacturable device with good thermal design characteristics and a changed emission pattern without changing the horizontal mounting plane of the semiconductor photonic chip.
摘要翻译： 针对具有各种应用的发光二极管（LED）照明解决方案描述了侧向发射增强。 虽然典型的LED照明装置的光的大部分发射在发射光的半导体光子芯片的正常附近，但是本方法可以适合提供具有良好的热设计特性和改变的发射图案的紧凑的，易于制造的装置，而不改变 半导体光子芯片的水平安装平面。
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8.发明申请Submounts for semiconductor light emitting device packages and semiconductor light emitting device packages including the same 有权用于半导体发光器件封装的底座以及包括其的半导体发光器件封装公开(公告)号：US20070253209A1
公开(公告)日：2007-11-01
申请号：US11412381
申请日：2006-04-27
申请人： Ban Loh , Nicholas Medendorp , Bernd Keller
发明人： Ban Loh , Nicholas Medendorp , Bernd Keller
IPC分类号： B60Q1/124
CPC分类号： H01L25/0753 , F21K9/00 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/01078 , H01L2924/01079 , H01L2924/01087 , H01L2924/19107 , H01L2924/00014
摘要： A submount for a solid state lighting package includes a support member having upper and lower surfaces, a first side surface, and a second side surface opposite the first side surface, a first electrical bondpad on the upper surface of the support member and having a first bonding region proximate the first side surface of the support member and a second bonding region extending toward the second side surface of the support member, and a second electrical bondpad on the upper surface of the support member having a die mounting region proximate the first side surface of the support member and an extension region extending toward the second side surface of the support member. The die mounting region of the second electrical bondpad may be configured to receive an electronic device. The submount further includes a third electrical bondpad on the upper surface of the support member and positioned between the second side surface of the support member and the die mounting region of the second electrical bondpad.
摘要翻译： 一种用于固体照明包装的基座，包括具有上表面和下表面的支撑构件，第一侧表面和与第一侧表面相对的第二侧表面，位于支撑构件的上表面上的第一电接合垫， 接合区域靠近支撑构件的第一侧表面，以及第二接合区域，其朝着支撑构件的第二侧表面延伸，并且在支撑构件的上表面上的第二电接合板具有靠近第一侧表面的模具安装区域 并且延伸到所述支撑构件的第二侧表面的延伸区域。 第二电接合板的管芯安装区域可以被配置为接收电子设备。 底座还包括位于支撑构件的上表面上并位于支撑构件的第二侧表面和第二电接合垫的模具安装区域之间的第三电接合板。
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9.发明申请Method of uniform phosphor chip coating and led package fabricated using method 有权使用方法制造的均匀磷光体芯片涂层和LED封装的方法公开(公告)号：US20080079017A1
公开(公告)日：2008-04-03
申请号：US11881683
申请日：2007-07-27
申请人： Ban Loh , Nicholas Medendorp , Peter Andrews , Yankun Fu , Micheal Laughner , Ronan Letoquin
发明人： Ban Loh , Nicholas Medendorp , Peter Andrews , Yankun Fu , Micheal Laughner , Ronan Letoquin
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/505 , H01L33/54 , H01L2224/48091 , H01L2924/19107 , H01L2933/0041 , H01L2933/005 , H01L2924/00014
摘要： Methods for fabricating LED packages comprising providing an LED chip and covering at least part of it with a liquid medium. An optical element is provided and placed on the liquid medium. The optical element is allowed to settle to a desired level and the liquid medium is cured. LED packages are also disclosed that are fabricated using the disclosed methods.
摘要翻译： 制造LED封装的方法包括提供LED芯片并用液体介质覆盖其至少一部分。 提供光学元件并放置在液体介质上。 允许光学元件沉降至所需水平并且液体介质固化。 还公开了使用所公开的方法制造的LED封装。
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10.发明申请MULTI-CHIP LIGHT EMITTING DEVICE LAMPS FOR PROVIDING HIGH-CRI WARM WHITE LIGHT AND LIGHT FIXTURES INCLUDING THE SAME 有权用于提供高亮度白光的多芯片发光装置灯和包括其中的灯具公开(公告)号：US20070223219A1
公开(公告)日：2007-09-27
申请号：US11743324
申请日：2007-05-02
CPC分类号： H05B37/02 , C09K11/586 , C09K11/623 , C09K11/7421 , C09K11/7702 , C09K11/7721 , C09K11/7734 , F21K9/00 , F21K9/64 , F21V23/005 , F21Y2105/10 , F21Y2105/12 , F21Y2113/17 , F21Y2115/10 , H01L25/0753 , H01L33/504 , H01L2924/0002 , Y02B20/181 , H01L2924/00
摘要： A multi-chip lighting emitting device (LED) lamp for providing white light includes a submount including first and second die mounting regions thereon. A first LED chip is mounted on the first die mounting region, and a second LED chip is mounted on the second die mounting region. The LED lamp is configured to emit light having a spectral distribution including at least four different color peaks to provide the white light. For example, a first conversion material may at least partially cover the first LED chip, and may be configured to absorb at least some of the light of the first color and re-emit light of a third color. In addition, a second conversion material may at least partially cover the first and/or second LED chips, and may be configured to absorb at least some of the light of the first and/or second colors and re-emit light of a fourth color. Related light fixtures and methods are also discussed.
摘要翻译： 用于提供白光的多芯片发光装置（LED）灯包括其上包括第一和第二管芯安装区域的基座。 第一LED芯片安装在第一管芯安装区域上，第二LED芯片安装在第二管芯安装区域上。 LED灯被配置为发射具有包括至少四个不同颜色峰值的光谱分布的光以提供白光。 例如，第一转换材料可以至少部分地覆盖第一LED芯片，并且可以被配置为吸收第一颜色的至少一些光并重新发射第三颜色的光。 此外，第二转换材料可以至少部分地覆盖第一和/或第二LED芯片，并且可以被配置为吸收第一颜色和/或第二颜色的至少一些光并重新发射第四颜色的光 。 还讨论了相关灯具和方法。
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