- 专利标题: Method and apparatus for heat processing of substrate
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申请号: US11229555申请日: 2005-09-20
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公开(公告)号: US20060005420A1公开(公告)日: 2006-01-12
- 发明人: Masatoshi Deguchi , Eiichi Sekimoto , Koichi Asaka , Yuji Matsuyama
- 申请人: Masatoshi Deguchi , Eiichi Sekimoto , Koichi Asaka , Yuji Matsuyama
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 优先权: JPJP2000-283407 20000919
- 主分类号: B05D3/02
- IPC分类号: B05D3/02
摘要:
The present invention relates to a method for heat processing of a substrate having the step of baking a substrate, on which a coating film is formed, at a predetermined high temperature, comprising a first step of increasing the substrate from a predetermined low temperature to a predetermined intermediate temperature lower than a predetermined reaction temperature at which the coating film reacts, a second step of maintaining the substrate at the predetermined intermediate temperature for a predetermined period of time, and a third step of increasing the temperature of the substrate to the predetermined high temperature higher than the predetermined reaction temperature. By temporarily increasing the temperature of the substrate to the intermediate temperature lower than the reaction temperature, maintaining the substrate at this intermediate temperature for the predetermined period of time, and thereafter increasing the temperature of the substrate to the high temperature higher than the reaction temperature when the temperature of the substrate is increased, the temperature within the surface of the substrate can be made uniform when the temperature of the substrate reaches the reaction temperature. Consequently, a chemical reaction due to heat processing of the coating film within the surface of the substrate is performed uniformly.
公开/授权文献
- US07517217B2 Method and apparatus for heat processing of substrate 公开/授权日:2009-04-14
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