- 专利标题： Semiconductor devices having a planarized insulating layer and methods of forming the same
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申请号： US11184701申请日： 2005-07-19
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公开(公告)号： US20060011959A1公开(公告)日： 2006-01-19
- 发明人: Jae-Hyun Park , Jae-Hee Oh , Won-Cheol Jeong
- 申请人： Jae-Hyun Park , Jae-Hee Oh , Won-Cheol Jeong
- 优先权： KR2004-56127 20040719
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L21/4763 ; H01L21/461
摘要：
A semiconductor device includes at least one phase-change pattern disposed on a semiconductor substrate. A planarized capping layer, a planarized protecting layer, and a planarized insulating layer are sequentially stacked to surround sidewalls of the at least one phase-change pattern. An interconnection layer pattern is disposed on the planarized capping layer, the planarized protecting layer, and the planarized insulating layer. The interconnection layer pattern is in contact with the phase-change pattern.
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