发明申请
US20060011972A1 Non-volatile memory cell, memory cell arrangement and method for production of a non-volatile memory cell
有权
非易失性存储单元,存储单元布置和用于生产非易失性存储单元的方法
- 专利标题: Non-volatile memory cell, memory cell arrangement and method for production of a non-volatile memory cell
- 专利标题(中): 非易失性存储单元,存储单元布置和用于生产非易失性存储单元的方法
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申请号: US10533215申请日: 2003-10-29
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公开(公告)号: US20060011972A1公开(公告)日: 2006-01-19
- 发明人: Andrew Graham , Franz Hofmann , Wolfgang Honlein , Johannes Kretz , Franz Kreupl , Erhard Landoraf , Richard Luyken , Wolfgang Rosner , Thomas Schultz , Michael Specht
- 申请人: Andrew Graham , Franz Hofmann , Wolfgang Honlein , Johannes Kretz , Franz Kreupl , Erhard Landoraf , Richard Luyken , Wolfgang Rosner , Thomas Schultz , Michael Specht
- 优先权: DE10250829.1 20021031
- 国际申请: PCT/DE03/03588 WO 20031029
- 主分类号: H01L29/792
- IPC分类号: H01L29/792
摘要:
A nonvolatile memory cell, memory cell arrangement, and method for production of a nonvolatile memory cell is disclosed. The nonvolatile memory cell includes a vertical field-effect transistor (FET). The FET contains a nanoelement arranged as a channel region and an electrically insulating layer. The electrically insulating layer at least partially surrounds the nanoelement and acts as a charge storage layer and as a gate-insulating layer. The electrically insulating layer is arranged such that electrical charge carriers may be selectively introduced into or removed from the electrically insulating layer and the electrical conductivity characteristics of the nanoelement may be influenced by the electrical charge carriers introduced into the electrically insulating layer.