发明申请
US20060013942A1 Method for improving electrical conductivity of metals, metal alloys and metal oxides by ion beam implantation
审中-公开
通过离子束注入改善金属，金属合金和金属氧化物的导电性的方法
- 专利标题： Method for improving electrical conductivity of metals, metal alloys and metal oxides by ion beam implantation
- 专利标题（中）： 通过离子束注入改善金属，金属合金和金属氧化物的导电性的方法
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申请号： US10892279申请日： 2004-07-16
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公开(公告)号： US20060013942A1公开(公告)日： 2006-01-19
- 发明人: Barry Muffoletto , Ashish Shah
- 申请人： Barry Muffoletto , Ashish Shah
- 主分类号： B05D5/12
- IPC分类号： B05D5/12
摘要：
A method for improving the electrical conductivity of a substrate of metal, metal alloy or metal oxide comprising directing a high energy beam of doping ions from Group VIII onto a substrate. This causes an intermixing of the doping ions with the native oxide of the substrate metal or metal alloy. The native oxide layer is changed from being electrically insulating to electrically conductive. The high-energy beam is an ion beam from a high-energy ion source. The thusly-treated substrate is useable in the manufacture of electrodes for devices such as capacitors and batteries.
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