- 专利标题： Stud electrode and process for making same
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申请号： US11215922申请日： 2005-08-30
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公开(公告)号： US20060014369A1公开(公告)日： 2006-01-19
- 发明人: Thomas Graettinger
- 申请人： Thomas Graettinger
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A process of making a stud capacitor structure is disclosed. The process includes embedding the stud in a dielectric stack. In one embodiment, the process includes forming an electrically conductive seed film in a contact corridor of the dielectric stack. A storage cell stud is also disclosed. The storage cell stud can be employed in a dynamic random-access memory device. An electrical system is also disclosed that includes the storage cell stud.
公开/授权文献
- US07271072B2 Stud electrode and process for making same 公开/授权日：2007-09-18
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