公开(公告)号：US07468323B2

公开(公告)日：2008-12-23

申请号：US10788899

申请日：2004-02-27

申请人： Kevin Torek ,  Kevin Shea ,  Thomas Graettinger

发明人： Kevin Torek ,  Kevin Shea ,  Thomas Graettinger

IPC分类号： H01L21/302

CPC分类号： H01L28/91 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32134 ,  H01L21/32135 ,  H01L27/10852

摘要： An etching process includes providing a dielectric first film on a substrate and a sacrificial second film on the dielectric first film. A conductive structure such as a container capacitor is formed in a recess in the first and second films. The conductive structure is exposed as to its external surface by an etch process that resists destructive collapse of the conductive structure.

摘要翻译： 蚀刻工艺包括在基片上提供电介质第一膜和在电介质第一膜上提供牺牲第二膜。 诸如容器电容器的导电结构形成在第一和第二膜的凹部中。 导电结构通过蚀刻工艺暴露于其外表面，该蚀刻工艺抵抗导电结构的破坏性破坏。

公开(公告)号：US20070232013A1

公开(公告)日：2007-10-04

申请号：US11742983

申请日：2007-05-01

申请人： H. Manning ,  Thomas Graettinger

发明人： H. Manning ,  Thomas Graettinger

IPC分类号： H01L21/20

CPC分类号： H01L27/10894 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/91 ,  H01L29/945 ,  Y10S257/906

摘要： The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.

摘要翻译： 本发明包括半导体结构，并且还包括形成多个电容器器件的方法。 本发明的示例性方法包括在绝缘材料的开口内形成导电储存节点材料以形成导电容器。 形成与至少一些容器物理接触的保持结构格子，随后去除绝缘材料以露出容器的外表面。 保持结构可以减轻容器结构的结构完整性的倒塌或其它损失。 导电容器对应于第一电容器电极。 在容器的外侧壁暴露之后，电介质材料形成在容器内并沿外露的外侧壁。 随后，在电介质材料上形成第二电容器电极。 第一和第二电容器电极与电介质材料一起形成多个电容器器件。

公开(公告)号：US20070075349A1

公开(公告)日：2007-04-05

申请号：US11591254

申请日：2006-10-31

申请人： Cancheepuram Srividya ,  F. Gealy ,  Thomas Graettinger

发明人： Cancheepuram Srividya ,  F. Gealy ,  Thomas Graettinger

IPC分类号： H01L29/94

CPC分类号： H01L28/65 ,  H01L27/1085 ,  H01L27/10852 ,  H01L27/1087 ,  H01L28/84 ,  H01L29/66181

摘要： The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.

摘要翻译： 本发明包括沉积贵金属的方法。 提供基板。 衬底具有第一区域和第二区域。 第一和第二区域暴露于包含贵金属和氧化剂的前体的混合物中。 在曝光期间，包含贵金属的层相对于第二区域选择性地沉积在第一区域上。 在具体应用中，第一区域可以包括硼磷硅酸盐玻璃，并且第二区域可以包括氧化铝或掺杂的非氧化硅。 本发明还包括电容器结构和形成电容器结构的方法。

公开(公告)号：US20070052115A1

公开(公告)日：2007-03-08

申请号：US11595436

申请日：2006-11-09

申请人： H. Manning ,  Thomas Graettinger

发明人： H. Manning ,  Thomas Graettinger

IPC分类号： H01L29/94

CPC分类号： H01L27/10894 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/91 ,  H01L29/945 ,  Y10S257/906

摘要： The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.

摘要翻译： 本发明包括半导体结构，并且还包括形成多个电容器器件的方法。 本发明的示例性方法包括在绝缘材料的开口内形成导电储存节点材料以形成导电容器。 形成与至少一些容器物理接触的保持结构格子，随后去除绝缘材料以露出容器的外表面。 保持结构可以减轻容器结构的结构完整性的倒塌或其它损失。 导电容器对应于第一电容器电极。 在容器的外侧壁暴露之后，电介质材料形成在容器内并沿外露的外侧壁。 随后，在电介质材料上形成第二电容器电极。 第一和第二电容器电极与电介质材料一起形成多个电容器器件。

公开(公告)号：US20060252201A1

公开(公告)日：2006-11-09

申请号：US11485926

申请日：2006-07-12

申请人： Marsela Pontoh ,  Cem Basceri ,  Thomas Graettinger

发明人： Marsela Pontoh ,  Cem Basceri ,  Thomas Graettinger

IPC分类号： H01L21/8242

CPC分类号： H01L28/84 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10855 ,  H01L28/82 ,  H01L28/91 ,  Y10S438/964

摘要： The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is formed to extend across the at least partially dissociated layer and within the gaps. The electrically conductive surface has a rugged topography imparted by the at least partially dissociated layer and the gaps. The topographically rugged surface can be incorporated into capacitor constructions. The capacitor constructions can be incorporated into DRAM cells, and such DRAM cells can be incorporated into electrical systems.

摘要翻译： 本发明包括形成坚固的导电表面的方法。 在一种方法中，跨越衬底形成层，并且随后至少部分地解离以形成延伸到衬底的间隙。 形成导电表面以跨越至少部分解离的层并且在间隙内延伸。 导电表面具有由至少部分解离的层和间隙赋予的粗糙的形貌。 地形坚固的表面可以结合到电容器结构中。 电容器结构可以并入DRAM单元中，并且这样的DRAM单元可以被并入到电气系统中。

公开(公告)号：US20060063344A1

公开(公告)日：2006-03-23

申请号：US11272232

申请日：2005-11-10

申请人： H. Manning ,  Thomas Graettinger ,  Marsela Pontoh

发明人： H. Manning ,  Thomas Graettinger ,  Marsela Pontoh

IPC分类号： H01L21/20

CPC分类号： H01L28/91 ,  H01L27/0207 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10894 ,  H01L29/66181

摘要： The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.

公开(公告)号：US20060033140A1

公开(公告)日：2006-02-16

申请号：US10918613

申请日：2004-08-13

申请人： Thomas Graettinger

发明人： Thomas Graettinger

IPC分类号： H01L21/8242 ,  H01L29/94

CPC分类号： H01L27/10852 ,  H01L27/10814 ,  H01L27/10885 ,  H01L28/60 ,  H01L28/75 ,  H01L28/90

摘要： The invention includes memory circuitry. In one implementation, memory circuitry includes a memory array comprising a plurality of memory cell capacitors. Individual of the capacitors include a storage node electrode, a capacitor dielectric region, and a cell electrode. The cell electrode is commonly shared among at least some of the plurality of memory cell capacitors within the memory array. The cell electrode within the memory array includes a conductor metal layer including at least one of elemental tungsten, a tungsten alloy, tungsten silicide and tungsten nitride. Polysilicon is received over the conductor metal layer. The conductor metal layer and the polysilicon are received over the storage node electrodes of said at least some of the plurality of memory cell capacitors. Other aspects and implementations are contemplated.

公开(公告)号：US20050191856A1

公开(公告)日：2005-09-01

申请号：US10788899

申请日：2004-02-27

申请人： Kevin Torek ,  Kevin Shea ,  Thomas Graettinger

发明人： Kevin Torek ,  Kevin Shea ,  Thomas Graettinger

IPC分类号： H01L21/02 ,  H01L21/302 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L28/91 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32134 ,  H01L21/32135 ,  H01L27/10852

摘要： An etching process includes providing a dielectric first film on a substrate and a sacrificial second film on the dielectric first film. A conductive structure such as a container capacitor is formed in a recess in the first and second films. The conductive structure is exposed as to its external surface by an etch process that resists destructive collapse of the conductive structure.

公开(公告)号：US20070114586A1

公开(公告)日：2007-05-24

申请号：US11656855

申请日：2007-01-23

申请人： Thomas Graettinger ,  F. Daniel Gealy

发明人： Thomas Graettinger ,  F. Daniel Gealy

IPC分类号： H01L29/94

CPC分类号： H01L21/7687 ,  H01L21/28518 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76855 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/10855 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrical contact includes a non-conductive spacer surrounding conductive plug material along the full height of the contact. The spacer inhibits oxide and other diffusion through the contact. In the illustrated embodiment, the contact includes metals or metal oxides which are resistant to oxidation, and additional conductive barrier layers. The contact is particularly useful in integrated circuits which include high dielectric constant materials.

摘要翻译： 电触点包括围绕接触的整个高度的导电插塞材料的非导电间隔物。 间隔物通过接触体阻止氧化物和其它扩散。 在所示实施例中，触点包括耐氧化的金属或金属氧化物，以及附加的导电阻挡层。 该接触在包括高介电常数材料的集成电路中特别有用。

公开(公告)号：US20060063345A1

公开(公告)日：2006-03-23

申请号：US11272247

申请日：2005-11-10

申请人： H. Manning ,  Thomas Graettinger ,  Marsela Pontoh

发明人： H. Manning ,  Thomas Graettinger ,  Marsela Pontoh

IPC分类号： H01L21/20 ,  H01L21/8242

CPC分类号： H01L28/91 ,  H01L27/0207 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10894 ,  H01L29/66181

摘要： The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.

摘要翻译： 本发明包括半导体结构，并且还包括形成多个电容器器件的方法。 本发明的示例性方法包括在绝缘材料的开口内形成导电储存节点材料以形成导电容器。 形成与至少一些容器物理接触的保持结构格子，随后去除绝缘材料以露出容器的外表面。 保持结构可以减轻容器结构的结构完整性的倒塌或其它损失。 导电容器对应于第一电容器电极。 在容器的外侧壁暴露之后，电介质材料形成在容器内并沿外露的外侧壁。 随后，在电介质材料上形成第二电容器电极。 第一和第二电容器电极与电介质材料一起形成多个电容器器件。